creat by art - low power loss, high efficiency - guardring for overvoltage protection - high surge current capability - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free base p/n with prefix "h" on packing code - aec-q101 qualified terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test, with prefix "h" on packing code meet jesd 201 class 2 whisker test symbol unit v rrm v v rms v v dc v i f(av) a i rrm a a ma dv/dt v/ s r jc o c/w t j o c t stg o c document number: ds_d1308038 version: g13 polarity: as marked MBR20L100CT thru mbr20l120ct taiwan semiconductor dual common cathode schottk y rectifier features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec mounting torque: 5 in-lbs maximum weight: 1.9 g (approximately) maximum ratings and electrical characteristics (t a =25 unless otherwise noted) parameter maximum repetitive peak reverse voltage mechanical data to-220ab case: to-220ab maximum rms voltage maximum dc blocking voltage maximum average forward rectified current 20 100 120 peak repetitive forward current (rated vr, square wave, 20khz) i frm 20 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 150 a v typ peak repetitive reverse surge current (note 1) 1 maximum instantaneous forward voltage (note 2) i f = 10a, t j =25 i f = 10a, t j =125 i f = 20a, t j =25 i f = 20a, t j =125 v f max typ max 0.72 voltage rate of change (rated v r ) 10000 typical thermal resistance operating junction temperature range - 55 to +150 maximum reverse current @ rated vr t j =25 t j =125 i r typ max typ storage temperature range - 55 to +150 note 1: tp = 2.0 s, 1.0khz note 2: pulse test with pw=300 s, 1% duty cycle MBR20L100CT mbr20l120ct 100 120 70 84 0.75 0.78 0.83 0.58 0.68 0.63 0.72 10 0.81 0.85 0.86 0.90 0.67 0.75 0.73 0.80 2.8 3.0 max 1.10 20 1.00 20 1.20 15 1.40
creat by art part no. mbr20l1xxct part no. MBR20L100CT MBR20L100CT MBR20L100CT (ta=25 unless otherwise noted) document number: ds_d1308038 version: g13 MBR20L100CT thru mbr20l120ct taiwan semiconductor ordering information aec-q101 qualified packing code green compound code package note 1: "xx" defines voltage from 100v (MBR20L100CT) to 120v (mbr20l120ct) packing prefix "h" c0 suffix "g" to-220ab 50 / tube example preferred p/n aec-q101 qualified packing code green compound code description MBR20L100CT c0 c0 MBR20L100CT c0g c0 g green compound MBR20L100CThc0 h c0 aec-q101 qualified ratings and characteristics curves 0 5 10 15 20 25 0 25 50 75 100 125 150 average forward a current (a) case temperature ( o c) fig.1 forward current derating curve resistive or inductiveload with heatsink MBR20L100CT mbr20l120ct 0 25 50 75 100 125 150 175 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 2 maximum forward surge current per leg 8.3ms single half sine wave jedec method MBR20L100CT mbr20l120ct 0.01 0.1 1 10 100 1000 10000 10 20 30 40 50 60 70 80 90 100 reverse leakage current (ua) percent of rated peak reverse voltage (%) fig. 4 typical reverse characteristics per leg tj=125 tj=25 MBR20L100CT mbr20l120ct 0.1 1 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 forward current (a) forward voltage (v) fig. 3 typical forward characteristics per leg tj=125 tj=25 MBR20L100CT mbr20l120ct
creat by art min max min max a - 10.50 - 0.413 b 2.62 3.44 0.103 0.135 c 2.80 4.20 0.110 0.165 d 0.68 0.94 0.027 0.037 e 3.54 4.00 0.139 0.157 f 14.60 16.00 0.575 0.630 g 13.19 14.79 0.519 0.582 h 2.41 2.67 0.095 0.105 i 4.42 4.76 0.174 0.187 j 1.14 1.40 0.045 0.055 k 5.84 6.86 0.230 0.270 l 2.20 2.80 0.087 0.110 m 0.35 0.64 0.014 0.025 p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1308038 version: g13 marking diagram MBR20L100CT thru mbr20l120ct taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) 100 1000 10000 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 5 typical junction capacitance per leg MBR20L100CT mbr20l120ct f=1.0mhz vsig=50mvp-p 0.1 1 10 100 1000 0.01 0.1 1 10 100 transient thermal impedance ( /w) t-pulse duration(s) fig. 6 typical transient thermal impedance per leg
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